unisonic technologies co., ltd 14n40k-mt preliminary power mosfet www.unisonic.com.tw 1 of 7 copyright ? 2015 unisonic technologies co., ltd qw-r502-b10.d 14a, 400v n-channel power mosfet ? description the utc 14n40k-mt is an n-channel enhancement mode power mosfet. the device adopts planar stripe and uses dmos technology to minimize and provide lower on-state resistance and faster switching s peed. it can also withstand high energy pulse under the avalanche and commutation mode conditions. the utc 14n40k-mt is ideally suitable for high efficiency switch mode power supply, power factor correction and electronic lamp ballast based on half bridge topology. ? features * r ds(on) < 0.34 ? @ v gs = 10v, i d = 7a * fast switching capability * avalanche energy tested * improved dv/dt capability, high ruggedness ? symbol to-220f1 to-220 to-220f2 1 1 to-220f 1 1 ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing 14n40kl-ta3-t 14n40kg-ta3-t to-220 g d s tube 14n40kl-tf3-t 14n40kg-tf3-t to-220f g d s tube 14N40KL-TF1-T 14n40kg-tf1-t to-220f1 g d s tube 14n40kl-tf2-t 14n40kg-tf2-t to-220f2 g d s tube note: pin assignment: g: gate d: drain s: source
14n40k-mt preliminary power mosfet unisonic technologies co., ltd 2 of 7 www.unisonic.com.tw qw-r502-b10.d ? marking
14n40k-mt preliminary power mosfet unisonic technologies co., ltd 3 of 7 www.unisonic.com.tw qw-r502-b10.d ? absolute maximum ratings (t c = 25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 400 v gate-source voltage v gss 30 v continuous drain current i d 14 a pulsed drain current (note 2) i dm 48 a avalanche current (note 2) i ar 14 a single pulsed avalanche energy (note 3) e as 535 mj peak diode recovery dv/dt (note 4) dv/dt 4.5 v/ns to-220 150 w power dissipation (t c =25c) to-220f/to-220f1 to-220f2 40 w to-220 1.2 w/c derate above 25c to-220f/to-220f1 to-220f2 p d 0.32 w/c junction temperature t j +150 c storage temperature t stg -55~+150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating : pulse width limit ed by maximum junction temperature 3. l = 5.46mh, i as = 14a, v dd = 50v, r g = 25 ? , starting t j = 25c 4. i sd 14a, di/dt 200a/ s, v dd bv dss , starting t j = 25c ? thermal data parameter symbol ratings unit junction to ambient ja 62.5 /w to-220 0.83 /w junction to case to-220f/to-220f1 to-220f2 jc 3.125 /w
14n40k-mt preliminary power mosfet unisonic technologies co., ltd 4 of 7 www.unisonic.com.tw qw-r502-b10.d ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs = 0v, i d = 1ma 400 v drain-source leakage current i dss v ds = 400v, v gs = 0v 10 a v gs = 20v, v ds = 0v 100 na gate-source leakage current i gss v gs = -20v, v ds = 0v -100 na breakdown voltage temperature coefficient bv dss / t j i d =250ma,referenced to 25c 0.5 v/c on characteristics gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v static drain-source on-state resistance r ds(on) v gs = 10v, i d = 7a 0.26 0.34 ? dynamic characteristics input capacitance c iss 810 pf output capacitance c oss 190 pf reverse transfer capacitance c rss v ds =25v, v gs =0v, f=1.0mhz 10.5 pf switching characteristics total gate charge q g 34.9 nc gate-source charge q gs 9.1 nc gate-drain charge q gd v ds = 50v, v gs = 10v, i d = 0.3a, i d =100a (note 1, 2) 8.8 nc turn-on delay time t d(on) 66 ns turn-on rise time t r 96 ns turn-off delay time t d(off) 200 ns turn-off fall time t f v ds = 30v, v gs = 10v, i d = 0.3a, r g = 25 ? (note 1, 2) 112 ns drain-source diode characteristics and maximum ratings drain-source diode forward voltage v sd v gs = 0v, i s = 14a 1.4 v maximum continuous drain-source diode forward current i s 14 a maximum pulsed drain-source diode forward current i sm 56 a notes: 1. pulse test : pulse width 300 s, duty cycle 2%. 2. essentially independent of operating ambient temperature.
14n40k-mt preliminary power mosfet unisonic technologies co., ltd 5 of 7 www.unisonic.com.tw qw-r502-b10.d ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test - + peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms
14n40k-mt preliminary power mosfet unisonic technologies co., ltd 6 of 7 www.unisonic.com.tw qw-r502-b10.d ? test circuits and waveforms (cont.) v ds 90% 10% v gs t d(on) t r t d(off) t f switching test circuit switching waveforms 10v charge q gs q gd q g v gs gate charge test circui t gate charge waveform v dd t p time bv dss i as i d(t) v ds(t) unclamped inductive switching test circuit unclamped inductive switching waveforms
14n40k-mt preliminary power mosfet unisonic technologies co., ltd 7 of 7 www.unisonic.com.tw qw-r502-b10.d utc assumes no responsib ility for equipment failures that result from using pr oducts at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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